Studies of interface traps in GaN High-Electron-Mobility-Transistors (HEMTs)

• 主要作者: Phia, Chen Yew
• 其他作者: Ng Geok Ing
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2020
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/139673

This research presents the characterization of interface traps of GaN High-ElectronMobility Transistors (HEMT). GaN HEMT devices have shown excellent performance in many area of applications such as high power, high frequency, communication and space application. Though it is attractive for future a...