Tensile strained ge pseudo-heterostructure quantum wells

• 主要作者: Chen, Mi
• 其他作者: Fan Weijun
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2020
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/140404
• 機構: Nanyang Technological University

Ge semiconductor has received great attention recently due to its potential application in optoelectronic devices, such as Laser and LED diodes. Ge is an indirect band gap semiconductor, which results in a poor optical transition probability. However, the laser emission from the direct band transiti...