Studies of Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator-Semiconductor (GaN MISHEMT)

• المؤلف الرئيسي: Lau, Sien Hui
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2020
• الموضوعات: Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/141852
• المؤسسة: Nanyang Technological University

Gallium Nitride Electron Mobility Transistors (GaN HEMTs) and GaN Metal-Insulator Semiconductor (GaN MISHEMT) is a well-known material since the discovery of its properties due to high thermal operations, high frequency and high power to be applied in the Microfabrication device application. Hence,...