Effect of TaN intermediate layer on the back contact reaction of sputter-deposited Cu poor Cu2ZnSnS4 and Mo

• Main Authors: Zhuk, Siarhei, Wong, Terence Kin Shun, Tyukalova, Elizaveta, Guchhait, Asim, Seng, Debbie Hwee Leng, Tripathy, Sudhiranjan, Wong, Ten It, Sharma, Mohit, Medina, Henry, Duchamp, Martial, Wong, Lydia Helena, Dalapati, Goutam Kumar
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2020
• Subjects: Engineering::Materials; Sputter-grown Cu2ZnSnS4; Interface Engineering
• Online Access: https://hdl.handle.net/10356/142186
• Institution: Nanyang Technological University

Ultrathin tantalum nitride (TaN) intermediate layers (IL) with thickness from 3 nm to 12 nm have been used to limit the undesirable interfacial reaction between molybdenum (Mo) and copper-zinc-tin-sulphide (CZTS). The morphology, chemical and structural properties of the samples were characterized b...