Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias

• المؤلفون الرئيسيون: Lin, Ye, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; MIM Capacitor; ALD Samples
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/142599

Leakage current conduction mechanism of three-dimensional capacitors embedded in through-silicon vias has been investigated for two sets of test vehicles, namely "sputtering samples" and "atomic layer deposition (ALD) samples". Schottky emission, hopping conduction, Poole-Frenkel...