A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator

• المؤلفون الرئيسيون: Narasimman, Govind, Basu, Joydeep, Sethi, Pankaj, Krishnia, Sachin, Yi, Chen, Lew, Wen Siang, Basu, Arindam
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Electrical and electronic engineering; Random Number Generation; Low-power Electronics
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143334
• المؤسسة: Nanyang Technological University

We present a novel readout circuit for a ferromagnetic Hall cross-bar based random number generator. The random orientation of magnetic domains are result of anomalous Hall-effect. These ferromagnetic Hall cross-bar structures can be integrated with the read out circuit to form a plug and play rando...