A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator

A 126 μW readout circuit in 65nm CMOS with successive approximation based thresholding for domain wall magnet based random number generator

We present a novel readout circuit for a ferromagnetic Hall cross-bar based random number generator. The random orientation of magnetic domains are result of anomalous Hall-effect. These ferromagnetic Hall cross-bar structures can be integrated with the read out circuit to form a plug and play rando...

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書目詳細資料
Main Authors:	Narasimman, Govind, Basu, Joydeep, Sethi, Pankaj, Krishnia, Sachin, Yi, Chen, Lew, Wen Siang, Basu, Arindam
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2020
主題:	Engineering::Electrical and electronic engineering Random Number Generation Low-power Electronics
在線閱讀:	https://hdl.handle.net/10356/143334
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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