Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model

• المؤلفون الرئيسيون: Song, Zhigang, Fan, Weijun, Tan, Chuan Seng, Wang, Qijie, Nam, Donguk, Zhang, Dao Hua, Sun, Greg
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2020
• الموضوعات: Engineering::Materials; Ge; GeSn Alloy
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/143734

We extend the previous 30-band k· p model effectively employed for relaxed Ge1−xSnx alloy to the case of strained Ge1−xSnx alloy. The strain-relevant parameters for the 30-band k· p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from liter...