Band structure of strained Ge 1− x Sn x alloy : a full-zone 30-band k · p model
We extend the previous 30-band k· p model effectively employed for relaxed Ge1−xSnx alloy to the case of strained Ge1−xSnx alloy. The strain-relevant parameters for the 30-band k· p model are obtained by using linear interpolation between the values of single crystal of Ge and Sn that are from liter...
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| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/143734 |
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| Institution: | Nanyang Technological University |
| Language: | English |