High-performance back-illuminated Ge₀.₉₂Sn₀.₀₈/Ge multiple-quantum-well photodetector on Si platform for SWIR detection

• المؤلفون الرئيسيون: Wu, Shaoteng, Xu, Shengqiang, Zhou, Hao, Jin, Yuhao, Chen, Qimiao, Huang, Yi-Chiau, Zhang, Lin, Gong, Xiao, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Germanium-tin; Semiconductor; Silicon Photonics; Infrared Detectors; Black Silicon
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/152766
• المؤسسة: Nanyang Technological University

Recently, high-performance GeSn photodiodes with external light illuminated on the device top surface have been demonstrated on various platforms. However, for image sensing systems with a focal-plane array (FPA), the front-illuminated sensors usually suffer from area limitations. Here, we report hi...