RF performance benchmarking of TSV integrated surface electrode ion trap for quantum computing

• المؤلفون الرئيسيون: Zhao, Peng, Li, Hong Yu, Tao, Jing, Likforman, Jean-Pierre, Lim, Yu Dian, Seit, Wen Wei, Luca, Guidoni, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2021
• الموضوعات: Engineering::Electrical and electronic engineering; Surface Electrode Ion Trap; Finite Element Modeling
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/153006
• المؤسسة: Nanyang Technological University

Surface electrode ion trap is highly promising for practical quantum computing due to its superior controllability on the trapped ions. With advanced microfabrication techniques, silicon has been developed as ion trap substrate for delicate surface electrodes design as well as monolithic electro-opt...