Non-linear thermal resistance model for the simulation of high power GaN-based devices

We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature d...

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Main Authors: Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
Other Authors: Temasek Laboratories @ NTU
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/154965
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1549652022-01-20T02:39:28Z Non-linear thermal resistance model for the simulation of high power GaN-based devices Garciá-Sánchez, S. Iñiguez-de-la-Torre, I. Pérez, S. Ranjan, Kumud Agrawal, Manvi Lingaparthi, R. Dharmarasu, Nethaji Radhakrishnan, K. Arulkumaran, Subramaniam Ng, Geok Ing González, T. Mateos, J. Temasek Laboratories @ NTU Engineering::Electrical and electronic engineering Electrothermal Effects Power Semiconductor Devices We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature dependent thermal resistance models. Moreover, in order to correctly account for the steep increase of the thermal resistance of GaN devices at high temperature, where commonly used models fail, we propose a non-linear model which, included in an electro-thermal Monte Carlo simulator, is able to reproduce the strongly non-linear behavior of the thermal resistance observed in experiments at high DC power levels. The accuracy of the proposed non-linear thermal resistance model has been confirmed by means of the comparison with pulsed and DC measurements made in devices specifically fabricated on doped GaN, able to reach DC power levels above 150 W mm-1 at biases below 30 V. National Research Foundation (NRF) This work was partially supported by the NRF2017-NRFANR003 GaNGUN project, the Spanish MINECO and FEDER through project TEC2017-83910-R and the Junta de Castilla y León and FEDER through project SA254P18. 2022-01-20T02:39:28Z 2022-01-20T02:39:28Z 2021 Journal Article Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, K., Agrawal, M., Lingaparthi, R., Dharmarasu, N., Radhakrishnan, K., Arulkumaran, S., Ng, G. I., González, T. & Mateos, J. (2021). Non-linear thermal resistance model for the simulation of high power GaN-based devices. Semiconductor Science and Technology, 36(5), 055002-. https://dx.doi.org/10.1088/1361-6641/abeb83 0268-1242 https://hdl.handle.net/10356/154965 10.1088/1361-6641/abeb83 2-s2.0-85104333746 5 36 055002 en NRF2017-NRFANR003 Semiconductor Science and Technology © 2021 IOP Publishing Ltd. All rights reserved.
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Electrical and electronic engineering
Electrothermal Effects
Power Semiconductor Devices
spellingShingle Engineering::Electrical and electronic engineering
Electrothermal Effects
Power Semiconductor Devices
Garciá-Sánchez, S.
Iñiguez-de-la-Torre, I.
Pérez, S.
Ranjan, Kumud
Agrawal, Manvi
Lingaparthi, R.
Dharmarasu, Nethaji
Radhakrishnan, K.
Arulkumaran, Subramaniam
Ng, Geok Ing
González, T.
Mateos, J.
Non-linear thermal resistance model for the simulation of high power GaN-based devices
description We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature dependent thermal resistance models. Moreover, in order to correctly account for the steep increase of the thermal resistance of GaN devices at high temperature, where commonly used models fail, we propose a non-linear model which, included in an electro-thermal Monte Carlo simulator, is able to reproduce the strongly non-linear behavior of the thermal resistance observed in experiments at high DC power levels. The accuracy of the proposed non-linear thermal resistance model has been confirmed by means of the comparison with pulsed and DC measurements made in devices specifically fabricated on doped GaN, able to reach DC power levels above 150 W mm-1 at biases below 30 V.
author2 Temasek Laboratories @ NTU
author_facet Temasek Laboratories @ NTU
Garciá-Sánchez, S.
Iñiguez-de-la-Torre, I.
Pérez, S.
Ranjan, Kumud
Agrawal, Manvi
Lingaparthi, R.
Dharmarasu, Nethaji
Radhakrishnan, K.
Arulkumaran, Subramaniam
Ng, Geok Ing
González, T.
Mateos, J.
format Article
author Garciá-Sánchez, S.
Iñiguez-de-la-Torre, I.
Pérez, S.
Ranjan, Kumud
Agrawal, Manvi
Lingaparthi, R.
Dharmarasu, Nethaji
Radhakrishnan, K.
Arulkumaran, Subramaniam
Ng, Geok Ing
González, T.
Mateos, J.
author_sort Garciá-Sánchez, S.
title Non-linear thermal resistance model for the simulation of high power GaN-based devices
title_short Non-linear thermal resistance model for the simulation of high power GaN-based devices
title_full Non-linear thermal resistance model for the simulation of high power GaN-based devices
title_fullStr Non-linear thermal resistance model for the simulation of high power GaN-based devices
title_full_unstemmed Non-linear thermal resistance model for the simulation of high power GaN-based devices
title_sort non-linear thermal resistance model for the simulation of high power gan-based devices
publishDate 2022
url https://hdl.handle.net/10356/154965
_version_ 1723453414541623296