Non-linear thermal resistance model for the simulation of high power GaN-based devices

• Main Authors: Garciá-Sánchez, S., Iñiguez-de-la-Torre, I., Pérez, S., Ranjan, Kumud, Agrawal, Manvi, Lingaparthi, R., Dharmarasu, Nethaji, Radhakrishnan, K., Arulkumaran, Subramaniam, Ng, Geok Ing, González, T., Mateos, J.
• Other Authors: Temasek Laboratories @ NTU
• Format: Article
• Language: English
• Published: 2022
• Subjects: Engineering::Electrical and electronic engineering; Electrothermal Effects; Power Semiconductor Devices
• Online Access: https://hdl.handle.net/10356/154965
• Institution: Nanyang Technological University

We report on the modeling of self-heating in GaN-based devices. While a constant thermal resistance is able to account for the self-heating effects at low power, the decrease of the thermal conductance of semiconductors when the lattice temperature increases, makes necessary the use of temperature d...