Uncovering the indium filament revolution in transparent bipolar ito/siox/ito resistive switching memories
Transparent resistive switching random access memory (ReRAM) is of interest for the future integrated invisible circuitry. However, poor understanding of its working mechanism in transparent ReRAMs with the indium tin oxide (ITO) electrode is still a critical problem and will hinder its widespread a...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2022
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/155166 |
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| Institution: | Nanyang Technological University |
| Language: | English |