Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications

Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications

This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and charact...

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Main Author: Wong, Yi Jing
Other Authors: Radhakrishnan K
Format: Final Year Project
Language:English
Published: Nanyang Technological University 2022
Subjects:
Engineering::Materials::Microelectronics and semiconductor materials
Online Access:https://hdl.handle.net/10356/156311
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1563112023-01-09T01:46:04Z Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications Wong, Yi Jing Radhakrishnan K Raju V. Ramanujan School of Materials Science and Engineering Ramanujan@ntu.edu.sg, ERADHA@ntu.edu.sg Engineering::Materials::Microelectronics and semiconductor materials This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results. Bachelor of Engineering (Materials Engineering) 2022-04-24T13:36:00Z 2022-04-24T13:36:00Z 2022 Final Year Project (FYP) Wong, Y. J. (2022). Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications. Final Year Project (FYP), Nanyang Technological University, Singapore. https://hdl.handle.net/10356/156311 https://hdl.handle.net/10356/156311 en MSE/21/112 application/pdf Nanyang Technological University
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle Engineering::Materials::Microelectronics and semiconductor materials
Wong, Yi Jing
Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
description This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and characterization of GaN/AlN on SiC were conducted and the experimental data were compared against the simulated results.
author2 Radhakrishnan K
author_facet Radhakrishnan K
Wong, Yi Jing
format Final Year Project
author Wong, Yi Jing
author_sort Wong, Yi Jing
title Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
title_short Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
title_full Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
title_fullStr Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
title_full_unstemmed Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications
title_sort simulation and characterization of two-dimensional hole gas in gan heterostructures for gan hemt applications
publisher Nanyang Technological University
publishDate 2022
url https://hdl.handle.net/10356/156311
_version_ 1754611254755852288

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