Simulation and characterization of two-dimensional hole gas in GaN heterostructures for GaN HEMT applications

• Main Author: Wong, Yi Jing
• Other Authors: Radhakrishnan K
• Format: Final Year Project
• Language: English
• Published: Nanyang Technological University 2022
• Subjects: Engineering::Materials::Microelectronics and semiconductor materials
• Online Access: https://hdl.handle.net/10356/156311
• Institution: Nanyang Technological University

This report presents the research work carried out to investigate two-dimensional hole gas (2DHG) in GaN-based heterostructures for GaN high electron mobility transistors (HEMTs) application. In this project, simulations of 2DHG in GaN/AlGaN and GaN/AlN heterostructures were done. Growth and charact...