Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes

A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple...

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Main Authors: Teo, Adrian J. T., Li, Holden King Ho
Other Authors: School of Mechanical and Aerospace Engineering
Format: Article
Language:English
Published: 2022
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Online Access:https://hdl.handle.net/10356/160535
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-1605352022-07-26T06:36:04Z Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes Teo, Adrian J. T. Li, Holden King Ho School of Mechanical and Aerospace Engineering Engineering::Mechanical engineering 3D MEMS Wafer Bonding A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V. Published version This research was funded by the Defense Advanced Research Projects Agency (DARPA) under contract HR0011-09-2-0004. 2022-07-26T06:36:04Z 2022-07-26T06:36:04Z 2021 Journal Article Teo, A. J. T. & Li, H. K. H. (2021). Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes. Micromachines, 12(12), 1481-. https://dx.doi.org/10.3390/mi12121481 2072-666X https://hdl.handle.net/10356/160535 10.3390/mi12121481 34945331 2-s2.0-85122141955 12 12 1481 en Micromachines © 2021 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https:// creativecommons.org/licenses/by/ 4.0/). application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic Engineering::Mechanical engineering
3D MEMS
Wafer Bonding
spellingShingle Engineering::Mechanical engineering
3D MEMS
Wafer Bonding
Teo, Adrian J. T.
Li, Holden King Ho
Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
description A high-aspect-ratio three-dimensionally (3D) stacked comb structure for micromirror application is demonstrated by wafer bonding technology in CMOS-compatible processes in this work. A vertically stacked comb structure is designed to circumvent any misalignment issues that could arise from multiple wafer bonding. These out-of-plane comb drives are used for the bias actuation to achieve a larger tilt angle for micromirrors. The high-aspect-ratio mechanical structure is realized by the deep reactive ion etching of silicon, and the notching effect in silicon-on-insulator (SOI) wafers is minimized. The low-temperature bonding of two patterned wafers is achieved with fusion bonding, and a high bond strength up to 2.5 J/m2 is obtained, which sustains subsequent processing steps. Furthermore, the dependency of resonant frequency on device dimensions is studied systematically, which provides useful guidelines for future design and application. A finalized device fabricated here was also tested to have a resonant frequency of 17.57 kHz and a tilt angle of 70° under an AC bias voltage of 2 V.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Teo, Adrian J. T.
Li, Holden King Ho
format Article
author Teo, Adrian J. T.
Li, Holden King Ho
author_sort Teo, Adrian J. T.
title Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
title_short Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
title_full Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
title_fullStr Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
title_full_unstemmed Realization of three-dimensionally MEMS stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in CMOS-compatible processes
title_sort realization of three-dimensionally mems stacked comb structures for microactuators using low-temperature multi-wafer bonding with self-alignment techniques in cmos-compatible processes
publishDate 2022
url https://hdl.handle.net/10356/160535
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