Regrown ohmic contact to GaN-based high electron mobility transistors

• 主要作者: Tan, Eleen
• 其他作者: Radhakrishnan K
• 格式: Final Year Project
• 語言: English
• 出版: Nanyang Technological University 2023
• 主題: Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/167696
• 機構: Nanyang Technological University

GaN-based High Electron Mobility Transistors have been of great interest for applications in high temperature, high frequency, high speed, and high power devices. GaN-based HEMTs have properties like wide bandgap, high saturation, and high critical breakdown field, making them favourable for further...