Regrown ohmic contact to GaN-based high electron mobility transistors

Regrown ohmic contact to GaN-based high electron mobility transistors

GaN-based High Electron Mobility Transistors have been of great interest for applications in high temperature, high frequency, high speed, and high power devices. GaN-based HEMTs have properties like wide bandgap, high saturation, and high critical breakdown field, making them favourable for further...

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محفوظ في:

التفاصيل البيبلوغرافية
المؤلف الرئيسي:	Tan, Eleen
مؤلفون آخرون:	Radhakrishnan K
التنسيق:	Final Year Project
اللغة:	English
منشور في:	Nanyang Technological University 2023
الموضوعات:	Engineering::Electrical and electronic engineering
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/167696
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	Nanyang Technological University
اللغة:	English

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