Regrown ohmic contact to GaN-based high electron mobility transistors

• المؤلف الرئيسي: Tan, Eleen
• مؤلفون آخرون: Radhakrishnan K
• التنسيق: Final Year Project
• اللغة: English
• منشور في: Nanyang Technological University 2023
• الموضوعات: Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/167696
• المؤسسة: Nanyang Technological University

GaN-based High Electron Mobility Transistors have been of great interest for applications in high temperature, high frequency, high speed, and high power devices. GaN-based HEMTs have properties like wide bandgap, high saturation, and high critical breakdown field, making them favourable for further...