Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact

Fermi level depinning via insertion of a graphene buffer layer at the gold-2D tin monoxide contact

Two-dimensional (2D) tin monoxide (SnO) has attracted much attention owing to its distinctive electronic and optical properties, which render itself suitable as a channel material in field effect transistors (FETs). However, upon contact with metals for such applications, the Fermi level pinning eff...

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書目詳細資料
Main Authors:	Tian, Yujia, Kripalani, Devesh R., Xue, Ming, Zhou, Kun
其他作者:	School of Mechanical and Aerospace Engineering
格式:	Article
語言:	English
出版:	2023
主題:	Engineering::Mechanical engineering Heterojunctions Metal-Semiconductor Contacts
在線閱讀:	https://hdl.handle.net/10356/171331
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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