Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate

• المؤلف الرئيسي: Lee, Wei Yi.
• مؤلفون آخرون: Ng Geok Ing
• التنسيق: Final Year Project
• اللغة: English
• منشور في: 2009
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/17756
• المؤسسة: Nanyang Technological University

In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity (HR) silicon substrate. AlGaN/GaN HEMT is popular for its advantages for high-power and high-frequency applications. Though AlGaN/GaN HEMT showed high power performance [3]...