Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate

Pulsed current-voltage characteristics of AlGaN/GaN high-electron-mobility-transistors on HR-Si substrate

In recent years, much research has been carried out on AlGaN/GaN high-electron-mobility transistors (HEMTs) on high resistivity (HR) silicon substrate. AlGaN/GaN HEMT is popular for its advantages for high-power and high-frequency applications. Though AlGaN/GaN HEMT showed high power performance [3]...

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書目詳細資料
主要作者:	Lee, Wei Yi.
其他作者:	Ng Geok Ing
格式:	Final Year Project
語言:	English
出版:	2009
主題:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
在線閱讀:	http://hdl.handle.net/10356/17756
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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