Self-powered action in metal-semiconductor-metal ultraviolet photodetectors based on AlGaN/GaN high electron mobility transistor structures on different substrates

• المؤلفون الرئيسيون: Razeen, Ahmed S., Tang, Eric X., Yuan, Gao, Ong, Jesper, Radhakrishnan, K., Tripathy, Sudhiranjan
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Superlattice; Photodetector
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/180260

AlGaN/GaN based metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV PDs) are highly in demand for several applications that require thermal and mechanical stability, and strength to handle different environmental conditions. However, the electro-optic performance of these devices is very...