Variable range hopping-assisted parasitic channel leakage in AlN/GaN/AlGaN HEMTs on Si

• المؤلفون الرئيسيون: Liu, Siyu, Zhuang, Yihao, Li, Hanchao, Xie, Qingyun, Wang, Yue, Xie, Hanlin, Ranjan, Kumud, Ng, Geok Ing
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; Physics; GaN HEMTs; 2D-VRH
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/180538

This work investigates the off-state leakage characteristics of AlN/GaN/AlGaN high electron mobility transistors (HEMTs) on Si substrate with varying mesa depths and uncovers the existence of a parasitic channel associated with the AlGaN back barrier. Significant differences in off-state leakage up...