Design of directional-emission GeSn multi-quantum-well light-emitting diodes on Si

• المؤلفون الرئيسيون: Chen, Qimiao, Mao, Weijie, Zhang, Lin, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2024
• الموضوعات: Engineering; GeSn; Light-emitting diodes; Metasurface
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/181724

Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scop...