Design of directional-emission GeSn multi-quantum-well light-emitting diodes on Si
Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scop...
Saved in:
Main Authors: | Chen, Qimiao, Mao, Weijie, Zhang, Lin, Tan, Chuan Seng |
---|---|
Other Authors: | School of Electrical and Electronic Engineering |
Format: | Article |
Language: | English |
Published: |
2024
|
Subjects: | |
Online Access: | https://hdl.handle.net/10356/181724 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | Nanyang Technological University |
Language: | English |
Similar Items
-
The DFT Study of Electronic and Optical Properties of the Surface Functional SiGe, GeSn and GeSn Nanostructures
by: Roohan Thirayatorn, et al.
Published: (2020) -
Strain relaxation of germanium-tin (GeSn) fins
by: Kang, Yuye, et al.
Published: (2018) -
Lateral GeSn waveguide-based homojunction phototransistor for next-generation 2000nm communication and sensing applications
by: Kumar, Harshvardhan, et al.
Published: (2023) -
Review of Si-based GeSn CVD growth and optoelectronic applications
by: Miao, Yuanhao, et al.
Published: (2022) -
GeSn/GaAs hetero-structure by magnetron sputtering
by: Qian, Li, et al.
Published: (2021)