Design of directional-emission GeSn multi-quantum-well light-emitting diodes on Si

Design of directional-emission GeSn multi-quantum-well light-emitting diodes on Si

Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scop...

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書目詳細資料
Main Authors:	Chen, Qimiao, Mao, Weijie, Zhang, Lin, Tan, Chuan Seng
其他作者:	School of Electrical and Electronic Engineering
格式:	Article
語言:	English
出版:	2024
主題:	Engineering GeSn Light-emitting diodes Metasurface
在線閱讀:	https://hdl.handle.net/10356/181724
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!

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