Design of directional-emission GeSn multi-quantum-well light-emitting diodes on Si

• Main Authors: Chen, Qimiao, Mao, Weijie, Zhang, Lin, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2024
• Subjects: Engineering; GeSn; Light-emitting diodes; Metasurface
• Online Access: https://hdl.handle.net/10356/181724
• Institution: Nanyang Technological University

Infrared light-emitting diodes (IR LEDs) are critical for various technologies, including communication, sensing, and medical diagnostics. Recent advances have introduced directional emission IR LEDs, which offer superior control over light direction, enhance efficiency, and broaden application scop...