Trench oxide interface states & BTI reliability in IGBT device

Trench oxide interface states & BTI reliability in IGBT device

For trench-gated power devices, the interface between gate oxide and silicon substrate in the trench module is one of the key contributors to long-term device reliability performance, and this has become increasingly important when devices are scaled down to reduce power loss. Until now, there has b...

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Bibliographic Details
Main Authors: Sim, Zhi Lin, Khor, Chun Wei, Gao, Yuan, Goh, David Eng Hui, Ngwan, Voon Cheng
Other Authors: School of Materials Science and Engineering
Format: Conference or Workshop Item
Language:English
Published: 2025
Subjects:
Engineering
Physics
Insulated gate bipolar transistor
Trench
Interface states
Oxide traps
Bias temperature instability
Online Access:https://hdl.handle.net/10356/182362
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Institution: Nanyang Technological University
Language: English
Description
Summary:For trench-gated power devices, the interface between gate oxide and silicon substrate in the trench module is one of the key contributors to long-term device reliability performance, and this has become increasingly important when devices are scaled down to reduce power loss. Until now, there has been little reported work on trench oxide interface states and their impact on reliability performance. In this work, we have successfully characterized trench oxide interface states such as the quantification of interface trap density as well as reliability BTI study. A physical model was proposed to explain the BTI test and its impact on the entire trench module, including the sidewall and bottom of the trench.

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