Trench oxide interface states & BTI reliability in IGBT device

• Main Authors: Sim, Zhi Lin, Khor, Chun Wei, Gao, Yuan, Goh, David Eng Hui, Ngwan, Voon Cheng
• Other Authors: School of Materials Science and Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2025
• Subjects: Engineering; Physics; Insulated gate bipolar transistor; Trench; Interface states; Oxide traps; Bias temperature instability
• Online Access: https://hdl.handle.net/10356/182362
• Institution: Nanyang Technological University

For trench-gated power devices, the interface between gate oxide and silicon substrate in the trench module is one of the key contributors to long-term device reliability performance, and this has become increasingly important when devices are scaled down to reduce power loss. Until now, there has b...