Trench oxide interface states & BTI reliability in IGBT device

• Main Authors: Sim, Zhi Lin, Khor, Chun Wei, Gao, Yuan, Goh, David Eng Hui, Ngwan, Voon Cheng
• Other Authors: School of Materials Science and Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2025
• Subjects: Engineering; Physics; Insulated gate bipolar transistor; Trench; Interface states; Oxide traps; Bias temperature instability
• Online Access: https://hdl.handle.net/10356/182362
• Institution: Nanyang Technological University

For trench-gated power devices, the interface between gate oxide and silicon substrate in the trench module is one of the key contributors to long-term device reliability performance, and this has become increasingly important when devices are scaled down to reduce power loss. Until now, there has been little reported work on trench oxide interface states and their impact on reliability performance. In this work, we have successfully characterized trench oxide interface states such as the quantification of interface trap density as well as reliability BTI study. A physical model was proposed to explain the BTI test and its impact on the entire trench module, including the sidewall and bottom of the trench.