Filtered cathodic vacuum arc deposition of metal nitrides

The numerous applications of group III nitride semiconductors have attracted significant research interest over the last decade. A novel ion-beam assisted filtered cathodic vacuum arc (I-FCVA) technique has been developed to fabricate III nitrides using pure metallic target as metal source. For the...

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Main Author: Ji, Xiaohong
Other Authors: Lau Shu Ping, Daniel
Format: Theses and Dissertations
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/19083
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-190832023-07-04T17:29:39Z Filtered cathodic vacuum arc deposition of metal nitrides Ji, Xiaohong Lau Shu Ping, Daniel School of Electrical and Electronic Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials The numerous applications of group III nitride semiconductors have attracted significant research interest over the last decade. A novel ion-beam assisted filtered cathodic vacuum arc (I-FCVA) technique has been developed to fabricate III nitrides using pure metallic target as metal source. For the first time, FCVA technique is capable of handling low melting point metal target such as Ga and In. Binary III nitrades (AIN, GaN, InN) on Si subtrates have been fabricated, characterized and analyzed. DOCTOR OF PHILOSOPHY (EEE) 2009-10-05T03:02:33Z 2009-10-05T03:02:33Z 2006 2006 Thesis Ji, X. (2006). Filtered cathodic vacuum arc deposition of metal nitrides. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/19083 10.32657/10356/19083 en 140 p. application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials
Ji, Xiaohong
Filtered cathodic vacuum arc deposition of metal nitrides
description The numerous applications of group III nitride semiconductors have attracted significant research interest over the last decade. A novel ion-beam assisted filtered cathodic vacuum arc (I-FCVA) technique has been developed to fabricate III nitrides using pure metallic target as metal source. For the first time, FCVA technique is capable of handling low melting point metal target such as Ga and In. Binary III nitrades (AIN, GaN, InN) on Si subtrates have been fabricated, characterized and analyzed.
author2 Lau Shu Ping, Daniel
author_facet Lau Shu Ping, Daniel
Ji, Xiaohong
format Theses and Dissertations
author Ji, Xiaohong
author_sort Ji, Xiaohong
title Filtered cathodic vacuum arc deposition of metal nitrides
title_short Filtered cathodic vacuum arc deposition of metal nitrides
title_full Filtered cathodic vacuum arc deposition of metal nitrides
title_fullStr Filtered cathodic vacuum arc deposition of metal nitrides
title_full_unstemmed Filtered cathodic vacuum arc deposition of metal nitrides
title_sort filtered cathodic vacuum arc deposition of metal nitrides
publishDate 2009
url https://hdl.handle.net/10356/19083
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