A steady-state RF inductively coupled plasma source for plasma processing

This project aims at developing the low-frequency, uniform and high density plasma source for materials processing. The uniform, large (32 cm in diameter), high-density plasma source capable of rapid processign of large substrates has been developed and investigated both theoretically and experimen...

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Main Authors: Xu, Shuyan, Ahn, Jaeshin, Ostrikov, Kostyantyn
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/2741
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Institution: Nanyang Technological University
id sg-ntu-dr.10356-2741
record_format dspace
spelling sg-ntu-dr.10356-27412023-03-04T03:23:48Z A steady-state RF inductively coupled plasma source for plasma processing Xu, Shuyan Ahn, Jaeshin Ostrikov, Kostyantyn School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials This project aims at developing the low-frequency, uniform and high density plasma source for materials processing. The uniform, large (32 cm in diameter), high-density plasma source capable of rapid processign of large substrates has been developed and investigated both theoretically and experimentally. RG 73/94 2008-09-17T09:14:04Z 2008-09-17T09:14:04Z 2000 2000 Research Report http://hdl.handle.net/10356/2741 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Electric apparatus and materials
Xu, Shuyan
Ahn, Jaeshin
Ostrikov, Kostyantyn
A steady-state RF inductively coupled plasma source for plasma processing
description This project aims at developing the low-frequency, uniform and high density plasma source for materials processing. The uniform, large (32 cm in diameter), high-density plasma source capable of rapid processign of large substrates has been developed and investigated both theoretically and experimentally.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Xu, Shuyan
Ahn, Jaeshin
Ostrikov, Kostyantyn
format Research Report
author Xu, Shuyan
Ahn, Jaeshin
Ostrikov, Kostyantyn
author_sort Xu, Shuyan
title A steady-state RF inductively coupled plasma source for plasma processing
title_short A steady-state RF inductively coupled plasma source for plasma processing
title_full A steady-state RF inductively coupled plasma source for plasma processing
title_fullStr A steady-state RF inductively coupled plasma source for plasma processing
title_full_unstemmed A steady-state RF inductively coupled plasma source for plasma processing
title_sort steady-state rf inductively coupled plasma source for plasma processing
publishDate 2008
url http://hdl.handle.net/10356/2741
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