Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications

Its primary objective was to investigate the use of the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique to deposit amorphous and microcrystalline hydrogenated silicon carbide films (SiC:H) with a view for the eventual use of such films for optoelectronic applications.

Saved in:
Bibliographic Details
Main Author: Yoon, Soon Fatt.
Other Authors: School of Electrical and Electronic Engineering
Format: Research Report
Published: 2008
Subjects:
Online Access:http://hdl.handle.net/10356/3016
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
id sg-ntu-dr.10356-3016
record_format dspace
spelling sg-ntu-dr.10356-30162023-03-04T03:19:48Z Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications Yoon, Soon Fatt. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics Its primary objective was to investigate the use of the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique to deposit amorphous and microcrystalline hydrogenated silicon carbide films (SiC:H) with a view for the eventual use of such films for optoelectronic applications. 2008-09-17T09:18:53Z 2008-09-17T09:18:53Z 1999 1999 Research Report http://hdl.handle.net/10356/3016 Nanyang Technological University application/pdf
institution Nanyang Technological University
building NTU Library
continent Asia
country Singapore
Singapore
content_provider NTU Library
collection DR-NTU
topic DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
spellingShingle DRNTU::Engineering::Electrical and electronic engineering::Optics, optoelectronics, photonics
Yoon, Soon Fatt.
Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
description Its primary objective was to investigate the use of the electron cyclotron resonance chemical vapour deposition (ECR-CVD) technique to deposit amorphous and microcrystalline hydrogenated silicon carbide films (SiC:H) with a view for the eventual use of such films for optoelectronic applications.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Yoon, Soon Fatt.
format Research Report
author Yoon, Soon Fatt.
author_sort Yoon, Soon Fatt.
title Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
title_short Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
title_full Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
title_fullStr Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
title_full_unstemmed Development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
title_sort development of amorphous silicon carbide semiconductor thin films for optoelectronic device applications
publishDate 2008
url http://hdl.handle.net/10356/3016
_version_ 1759853558999547904