Junction depth & defect characterization with the use of EBIC

There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n ju...

Full description

Saved in:

Bibliographic Details
Main Author:	Phua, Poh Chin.
Other Authors:	Ong, Vincent Keng Sian
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/3135
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3135
record_format	dspace
spelling	sg-ntu-dr.10356-31352023-07-04T15:48:04Z Junction depth & defect characterization with the use of EBIC Phua, Poh Chin. Ong, Vincent Keng Sian School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n junction geometry. Master of Engineering 2008-09-17T09:22:59Z 2008-09-17T09:22:59Z 2002 2002 Thesis http://hdl.handle.net/10356/3135 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Phua, Poh Chin. Junction depth & defect characterization with the use of EBIC
description	There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n junction geometry.
author2	Ong, Vincent Keng Sian
author_facet	Ong, Vincent Keng Sian Phua, Poh Chin.
format	Theses and Dissertations
author	Phua, Poh Chin.
author_sort	Phua, Poh Chin.
title	Junction depth & defect characterization with the use of EBIC
title_short	Junction depth & defect characterization with the use of EBIC
title_full	Junction depth & defect characterization with the use of EBIC
title_fullStr	Junction depth & defect characterization with the use of EBIC
title_full_unstemmed	Junction depth & defect characterization with the use of EBIC
title_sort	junction depth & defect characterization with the use of ebic
publishDate	2008
url	http://hdl.handle.net/10356/3135
_version_	1772826766479458304

Junction depth & defect characterization with the use of EBIC

Similar Items