Junction depth & defect characterization with the use of EBIC

• Main Author: Phua, Poh Chin.
• Other Authors: Ong, Vincent Keng Sian
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/3135
• Institution: Nanyang Technological University

There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n ju...