Junction depth & defect characterization with the use of EBIC

• المؤلف الرئيسي: Phua, Poh Chin.
• مؤلفون آخرون: Ong, Vincent Keng Sian
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3135
• المؤسسة: Nanyang Technological University

There are two objectives to be achieved in this work. Firstly, it is desirable to determine a new method of reconstructing the charge collection probability so as to extract the junction depth of the device. Secondly, it is also desirable to extract the defect location using the perpendicular p-n ju...