Device "S" leakage failure due to plasma damage
Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness.
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2008
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Online Access: | http://hdl.handle.net/10356/3385 |
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sg-ntu-dr.10356-33852023-07-04T15:18:04Z Device "S" leakage failure due to plasma damage Tan, Siew Yoon. Prasad, Krishnamachar School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness. Master of Science (Microelectronics) 2008-09-17T09:29:01Z 2008-09-17T09:29:01Z 2004 2004 Thesis http://hdl.handle.net/10356/3385 Nanyang Technological University application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering::Microelectronics Tan, Siew Yoon. Device "S" leakage failure due to plasma damage |
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Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness. |
author2 |
Prasad, Krishnamachar |
author_facet |
Prasad, Krishnamachar Tan, Siew Yoon. |
format |
Theses and Dissertations |
author |
Tan, Siew Yoon. |
author_sort |
Tan, Siew Yoon. |
title |
Device "S" leakage failure due to plasma damage |
title_short |
Device "S" leakage failure due to plasma damage |
title_full |
Device "S" leakage failure due to plasma damage |
title_fullStr |
Device "S" leakage failure due to plasma damage |
title_full_unstemmed |
Device "S" leakage failure due to plasma damage |
title_sort |
device "s" leakage failure due to plasma damage |
publishDate |
2008 |
url |
http://hdl.handle.net/10356/3385 |
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1772826418770608128 |