Device "S" leakage failure due to plasma damage
Study of the plasma damage in sub micrometer CMOS devices and investigate the root cause of leakage failure on specific products in the fab. On top of that, several experimental studies were carried out to study the influence of deposition rate as well as sputter rate on the liner thickness.
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| Format: | Theses and Dissertations |
| Published: |
2008
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| Online Access: | http://hdl.handle.net/10356/3385 |
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| Institution: | Nanyang Technological University |