Design and fabrication of III-V RF devices for MMIC applications

• المؤلف الرئيسي: Ang, Kian Siong
• مؤلفون آخرون: Ng, Geok Ing
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3437

Submicron AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) grown on GaAs substrate by MBE (Molecular Beam Epitaxy) has been designed, fabricated and characterized in this work.