High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 year...

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Bibliographic Details
Main Author:	Lu, Yuekang
Other Authors:	Zhu Weiguang
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	https://hdl.handle.net/10356/3502
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3502
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spelling	sg-ntu-dr.10356-35022023-07-04T17:34:04Z High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics Lu, Yuekang Zhu Weiguang School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 years. Nowadays in the state-of-the-art MOSFET, the gate oxide thickness is reduced to 1.2 nm. However, with the use of such thin SiO2,direct tunneling dominates the dielectric conduction which results in high leakage current and unacceptable power dissipations. In order to maintain the performance improvement trends, there are growing interests in the replacement of SiO2 with a high-k dielectric material. DOCTOR OF PHILOSOPHY (EEE) 2008-09-17T09:31:07Z 2008-09-17T09:31:07Z 2006 2006 Thesis Lu, Y. (2006). High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/3502 10.32657/10356/3502 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Lu, Yuekang High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
description	The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 years. Nowadays in the state-of-the-art MOSFET, the gate oxide thickness is reduced to 1.2 nm. However, with the use of such thin SiO2,direct tunneling dominates the dielectric conduction which results in high leakage current and unacceptable power dissipations. In order to maintain the performance improvement trends, there are growing interests in the replacement of SiO2 with a high-k dielectric material.
author2	Zhu Weiguang
author_facet	Zhu Weiguang Lu, Yuekang
format	Theses and Dissertations
author	Lu, Yuekang
author_sort	Lu, Yuekang
title	High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
title_short	High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
title_full	High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
title_fullStr	High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
title_full_unstemmed	High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
title_sort	high-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics
publishDate	2008
url	https://hdl.handle.net/10356/3502
_version_	1772827444908130304

High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

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