High-k hafnium oxide based thin films using laser molecular beam epitaxy for gate dielectrics

• 主要作者: Lu, Yuekang
• 其他作者: Zhu Weiguang
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
• 在線閱讀: https://hdl.handle.net/10356/3502

The constant increase in integrated circuit densities predicted by Moore’s law requires the continuous reduction of the CMOS device dimensions such as the gate length, gate oxide thickness, etc. Silicon dioxide (SiO2) has been used as the gate oxide and been aggressively scaled for more than 30 year...