Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films
216 p.
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2010
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sg-ntu-dr.10356-359632023-03-04T16:38:04Z Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films Ee, Elden Yong Chiang Chen Zhong School of Materials Science & Engineering DRNTU::Engineering::Materials::Plasma treatment 216 p. In the sub-quarter-micron generation integrated circuits (ICs), Cu has completely replaced aluminum as the interconnect material due to its favorable electrical conductivity (1.67 uQ»cm) and resistance to electromigration. In order to prevent Cu contamination in the silicon device layer, diffusion barriers such as tantalum (Ta) and tantalum nitride (TaN) have to be used to fully contain the Cu interconnects. It is a challenging issue to develop a new generation of more effective diffusion barriers with further down-scaling of transistor dimensions. DOCTOR OF PHILOSOPHY (MSE) 2010-04-23T02:15:15Z 2010-04-23T02:15:15Z 2006 2006 Thesis Ee, E. Y. C. (2006). Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films. Doctoral thesis, Nanyang Technological University, Singapore. https://hdl.handle.net/10356/35963 10.32657/10356/35963 application/pdf |
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DRNTU::Engineering::Materials::Plasma treatment Ee, Elden Yong Chiang Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
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216 p. |
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Chen Zhong |
author_facet |
Chen Zhong Ee, Elden Yong Chiang |
format |
Theses and Dissertations |
author |
Ee, Elden Yong Chiang |
author_sort |
Ee, Elden Yong Chiang |
title |
Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
title_short |
Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
title_full |
Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
title_fullStr |
Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
title_full_unstemmed |
Plasma assisted deposition of Ti-Si-N and Ti-Si-N-O diffusion barrier films |
title_sort |
plasma assisted deposition of ti-si-n and ti-si-n-o diffusion barrier films |
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2010 |
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https://hdl.handle.net/10356/35963 |
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1759856280826019840 |