Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications

The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heterojunction Bipolar Transistors (HBTs) and conduct comprehensive studies on the dc and microwave characteristics of the HBTs. The developed HBT technology is also intended to demonstrate its suitability f...

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Main Author:	Wang, Hong
Other Authors:	Ng, Geok Ing
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
Online Access:	http://hdl.handle.net/10356/3655
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3655
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spelling	sg-ntu-dr.10356-36552023-07-04T15:13:35Z Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications Wang, Hong Ng, Geok Ing School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heterojunction Bipolar Transistors (HBTs) and conduct comprehensive studies on the dc and microwave characteristics of the HBTs. The developed HBT technology is also intended to demonstrate its suitability for Monolithic Microwave Integrated Circuit applications. Doctor of Philosophy (EEE) 2008-09-17T09:34:36Z 2008-09-17T09:34:36Z 2001 2001 Thesis http://hdl.handle.net/10356/3655 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Integrated circuits Wang, Hong Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
description	The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heterojunction Bipolar Transistors (HBTs) and conduct comprehensive studies on the dc and microwave characteristics of the HBTs. The developed HBT technology is also intended to demonstrate its suitability for Monolithic Microwave Integrated Circuit applications.
author2	Ng, Geok Ing
author_facet	Ng, Geok Ing Wang, Hong
format	Theses and Dissertations
author	Wang, Hong
author_sort	Wang, Hong
title	Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
title_short	Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
title_full	Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
title_fullStr	Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
title_full_unstemmed	Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
title_sort	studies on inp-based heterojunction bipolar transistors (hbts) for mmic applications
publishDate	2008
url	http://hdl.handle.net/10356/3655
_version_	1772825171138183168

Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications

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