Studies on InP-based heterojunction bipolar transistors (HBTs) for MMIC applications
The main objectives of this thesis are to develop the fabrication technology for InP/InGaAs Heterojunction Bipolar Transistors (HBTs) and conduct comprehensive studies on the dc and microwave characteristics of the HBTs. The developed HBT technology is also intended to demonstrate its suitability f...
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格式: | Theses and Dissertations |
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2008
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在線閱讀: | http://hdl.handle.net/10356/3655 |
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機構: | Nanyang Technological University |