Simulation of stress in advanced silicided device structures

• المؤلف الرئيسي: Wong, Michael Hon Weng.
• مؤلفون آخرون: Pey, Kin Leong
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Microelectronics
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3745

In this project, a study of the process-induced stress associated with the silicidation of the poly-Si gate was done. The TSUPREM-4 software was used to simulate the growth of both the Ti- and Co-silicided 0.1 8um gate structures. The stress readings at the top corner of the poly-Si gate and in the...