Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).

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Bibliographic Details
Main Author: Yip, Kim Hong.
Other Authors: Yoon, Soon Fatt
Format: Theses and Dissertations
Published: 2008
Subjects:
DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:http://hdl.handle.net/10356/3902
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Institution: Nanyang Technological University
Description
Summary:This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).

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