Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).

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Bibliographic Details
Main Author:	Yip, Kim Hong.
Other Authors:	Yoon, Soon Fatt
Format:	Theses and Dissertations
Published:	2008
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	http://hdl.handle.net/10356/3902
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Institution:	Nanyang Technological University

id	sg-ntu-dr.10356-3902
record_format	dspace
spelling	sg-ntu-dr.10356-39022023-07-04T15:21:19Z Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE Yip, Kim Hong. Yoon, Soon Fatt School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering::Semiconductors This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE). Master of Engineering 2008-09-17T09:40:03Z 2008-09-17T09:40:03Z 2001 2001 Thesis http://hdl.handle.net/10356/3902 Nanyang Technological University application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Yip, Kim Hong. Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
description	This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).
author2	Yoon, Soon Fatt
author_facet	Yoon, Soon Fatt Yip, Kim Hong.
format	Theses and Dissertations
author	Yip, Kim Hong.
author_sort	Yip, Kim Hong.
title	Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
title_short	Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
title_full	Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
title_fullStr	Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
title_full_unstemmed	Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE
title_sort	deep level effects on the characteristics of high electron mobility transistors grown by solid source mbe
publishDate	2008
url	http://hdl.handle.net/10356/3902
_version_	1772828140063686656

Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

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