Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

• Main Author: Yip, Kim Hong.
• Other Authors: Yoon, Soon Fatt
• Format: Theses and Dissertations
• Published: 2008
• Subjects: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• Online Access: http://hdl.handle.net/10356/3902
• Institution: Nanyang Technological University

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).