Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

• المؤلف الرئيسي: Yip, Kim Hong.
• مؤلفون آخرون: Yoon, Soon Fatt
• التنسيق: Theses and Dissertations
• منشور في: 2008
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: http://hdl.handle.net/10356/3902

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).