Deep level effects on the characteristics of high electron mobility transistors grown by solid source MBE

• 主要作者: Yip, Kim Hong.
• 其他作者: Yoon, Soon Fatt
• 格式: Theses and Dissertations
• 出版: 2008
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: http://hdl.handle.net/10356/3902

This thesis presents the effect of deep levels on the performance of InxGa1-xP/In0.20Ga0.80As/GaAs and AlyGa1-yAs/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor (pHEMT) grown by solid source molecular beam epitaxy (SSMBE).